Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Authors:	Shih-Wei Tan Hon-Ren Chen Min-Yuan Chu Wei-Tien Chen An-Hung Lin Meng-Kai Hsu Tien-Sheng Lin Wen-Shiung Lour

Affiliation:	^aDepartment of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan, ROC;^bDepartment of Electrical Engineering, National University of Kaohsiung, 700 Kaohsiung University Road, Kaohsiung, Taiwan, ROC

Abstract:

Keywords:	InGaP/GaAs Heterojunction Current gain Sulfur treatment
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