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Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in <Emphasis Type="Italic">p</Emphasis>-Si/SiGe/Si structures with an anisotropic <Emphasis Type="Italic">g</Emphasis> factor |
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| Authors: | I L Drichko I Yu Smirnov A V Suslov O A Mironov and D R Leadley |
| Institution: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.National High Magnetic Field Laboratory,Tallahassee,USA;3.Warwick SEMINANO R & D Centre,University of Warwick Science Park,Coventry,UK;4.Department of Physics,University of Warwick Science Park,Coventry,UK |
| Abstract: | Magnetoresistivity ρ xx and ρ xy and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 × 1011 cm−2 in the temperature range 0.3–2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt θ to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor ν = 2 at θ ≈ 59°–60°. |
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