Mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms

The mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms is established by LEED and Auger electronic spectroscopy. The mechanism consists of diffusion of nickel atoms through the bulk and segregation of the atoms on the surface during annealing. This mechanism of nickel transport plays the governing role at temperatures below 700°C, where nickel transport along clean silicon surfaces is not observed. It is found that the nickel segregation factor is what determines the lowest temperature at which nickel transport is observed on clean silicon surfaces. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 6, 423–425 (25 March 1999)