首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Spiral Intramolecular Charge Transfer and Large First Hyperpolarizability in Möbius Cyclacenes: New Insight into the Localized π Electrons
Authors:Rong‐Lin Zhong  Dr Hong‐Liang Xu  Prof Zhong‐Min Su  Prof Zhi‐Ru Li  Dr Shi‐Ling Sun  Prof Yong‐Qing Qiu
Institution:1. Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun 130024 Jilin (China);2. State Key Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, Jilin University, Changchun 130023, Jilin (China)
Abstract:Much effort has been devoted to investigating the unusual properties of the π electrons in Möbius cyclacenes, which are localized in a special region. However, the localized π electrons are a disadvantage for applications in optoelectronics, because intramolecular charge transfer is limited. This raises the question of how the intramolecular charge transfer of a Möbius cyclacene with clearly localized π electrons can be enhanced. To this end, 8]Möbius cyclacene (8]MC) is used as a conjugated bridge in a donor–π‐conjugated bridge–acceptor (D–π–A) system, and NH2‐6‐8]MC‐10‐NO2 exhibits a fascinating spiral charge‐transfer transition character that results in a significant difference in dipole moments Δμ between the ground state and the crucial excited state. The Δμ value of 6.832 D for NH2‐6‐8]MC‐10‐NO2 is clearly larger than that of 0.209 D for 8]MC. Correspondingly, the first hyperpolarizability of NH2‐6‐8]MC‐10‐NO2 of 12 467 a.u. is dramatically larger than that of 261 a.u. for 8]MC. Thus, constructing a D–π–A framework is an effective strategy to induce greater spiral intramolecular charge transfer in MC although the π electrons are localized in a special region. This new insight into the properties of π electrons in Möbius cyclacenes may provide valuable information for their applications in optoelectronics.
Keywords:density functional calculations  electron transfer  electronic structure  Moebius compounds  nonlinear optics
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号