GaInP/GaAs HBTs for high-speed integrated circuit applications |
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| Authors: | Ho WJ Chang MF Sailer A Zampardi P Deakin D McDermott B Pierson R Higgins JA Waldrop J |
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| Institution: | Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA; |
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| Abstract: | The use of GaInP/GaAs heterojunction bipolar transistors (HBTs) for integrated circuit applications is demonstrated. The discrete devices fabricated showed excellent DC characteristics with low Vce offset voltage and very low temperature sensitivity of the current gain. For a non-self-aligned device with a 3-μm×1.4-μm emitter area, fT was extrapolated to 45 GHz and fmax was extrapolated to 70 GHz. The measured 1/f noise level was 20 dB better than that of AlGaAs HBTs and comparable to that of low-noise silicon bipolar junction transistors, and the noise bump (Lorentzian component) was not observed. The fabricated gain block circuits showed 8.5 dB gain with a 3-dB bandwidth of 12 GHz, and static frequency dividers (divide by 4) were operable up to 8 GHz |
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