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Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formation threshold |
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| Authors: | V G Mokerov Yu V Fedorov A V Guk Kh S Pak Yu V Khabarov A V Danilochkin |
| Institution: | 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia |
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