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Gasdynamic effects during the growth of crystalline gallium nitride via chloride-hydride epitaxy in a vertical reactor |
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| Authors: | A V Kondrat’ev D S Bazarevskii A S Segal’ S A Smirnov Yu N Makarov |
| Institution: | (1) CVD Equipment Corporation, 1860 Smithtown Ave., 11779 Ronkonkoma, NY, USA;(2) School of Aerospace, Tsinghua University, 100084 Beijing, China;(3) Department of Engineering Physics, Tsinghua University, 100084 Beijing, China |
| Abstract: | The growth of crystalline gallium nitride during chloride-hydride vapor epitaxy in a vertical reactor is numerically simulated. The effects of a break in the stability of the gas flow and the related changes in the crystal growth characteristics are analyzed; these changes are caused by changes in the flow rates of the gas components and in the crystal position with respect to the source of gallium. Free concentrational convection is found to substantially affect the crystal growth rate distribution over the crystal surface. |
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