| Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films |
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| 引用本文： | 孙捷,孙迎春. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films[J]. 中国化学, 2004, 22(7): 661-667. DOI: 10.1002/cjoc.20040220710 |
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| 作者姓名： | 孙捷 孙迎春 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China，Department of Foreign Languages，Shandong University，Weihai，Shandong 264209，China |
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| 摘 要： | Introduction Inorganic oxide films have attracted a lot of interest in the last several decades. Among them, silicon dioxide films are widely used in modern microelectronics, optics and mechanics. This material has been grown by various methods including thermal oxidation, chemical vapor phase deposition, plasma-enhanced chemical vapor phase deposition, and so on.1,2 Recently, Nagayama et al.3 have reported that SiO2 thin films could be produced by a new chemical method of liquid phase depos…
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| 关 键 词： | 化学液相沉积 氧化铝薄膜 pH值 X射线衍射 傅立叶变换红外光谱 电子扫描显微镜 |
Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films |
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| SUN,Jie,a SUN,Ying-Chunb aKey Laboratory of Semiconductor Materials Science. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films[J]. Chinese Journal of Chemistry, 2004, 22(7): 661-667. DOI: 10.1002/cjoc.20040220710 |
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| Authors: | SUN Jie a SUN Ying-Chunb aKey Laboratory of Semiconductor Materials Science |
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| Affiliation: | SUN,Jie*,a SUN,Ying-Chunb aKey Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China bDepartment of Foreign Languages,Shandong University,Weihai,Shandong 264209,China |
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| Abstract: | Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)] =0.0837 mol·L?1, [NaHCO3] = 0.214 mol·L?1, 15 °C Post‐growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy. Fourier transform infrared spectrum, X‐ray diffraction spectrum and scanning electron microscopy photograph. |
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| Keywords: | aluminum oxide chemical liquid phase deposition pH value electron dispersion spectroscopy Fourier transform infrared spectrum X-ray diffraction scanning electron microscopy |
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