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Al-doping-induced magnetocapacitance in the multiferroic CuCrS2
Authors:Liu Rong-Deng  Liu Yun-Tao  Chen Dong-Feng  He Lun-Hua  Yan Li-Qin  Wang Zhi-Cui  Sun Yang  Wang Fang-Wei
Institution:a China Institute of Atomic Energy, Beijing 102413, China;b State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract:In this paper, magnetic and dielectric properties of the quasi-two-dimensional triangular-lattice system CuCrS2 and its B-site-diluted analogs CuAl1-xCrxS2 (x=0.01 and x=0.02) are investigated. Antiferromagnetic phase transition is observed at about 38.5 K by magnetization measurement without shift induced by a small amount of dopping Al. Magnetodielectric effect is found near TN in each of the three compounds. The dielectric constant decreases and the magnetocapacitance increases with the increase of substitution of nonmagnetic Al3+ ions for the magnetic Cr3+ ions. The negative magnetocapacitive effect reaches ~13% for CuAl0.02Cr0.98S2.
Keywords:magnetocapacitance  dielectric property  magnetoelectric coupling  antiferromagnetics
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