An infra-red study of defects produced in n-type silicon by electron irradiation at low temperatures |
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| Authors: | A.R. BeanR.C. Newman |
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| Affiliation: | J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading, Berks U.K. |
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| Abstract: | The infra-red local mode absorption produced by irradiation of n-type silicon by 2 MeV electrons at temperatures in the range 100–140°K has been investigated. A new band at 884 cm-1 has been observed and interpreted as due to a vacancy— oxygen complex (A-centre) with a trapped electron. |
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