Electroreflectance in GeSi alloys under hydrostatic pressure

From the electroreflectance spectra measured under hydrostatic pressure to 7 kbar we have determined the pressure coefficients for germanium (dE₁/dP = 7.8 ± 0.4⁻⁶eV/bar, dP = 1.4 ± 0.8 10⁻⁶eV/bar), for Si (dE′_o/dP = 1 ± 1 10⁻⁶eV/bar, dE₁dP = 6.2 ± 0.4 10⁻⁶eV/bar) and for GeSi alloys in the entire composition region. For the composition 80–100% of Si which is widely discussed in the literature, we could distinguish two maxima with substantially different pressure coefficients. The absolute experimental values of dE/dP agree rather well with theoretical values which, together with composition shift of electroreflectance peaks, enable us to connect the peak E₁ predominantly with λ and L and E′_o with Г and Δ transitions in the entire composition region.