Transverse magnetoresistance and Hall effect in p-type tellurium in strong magnetic fields

Galvanomagnetic effects in tellurium with carrier concentrations ranges from 10¹⁴ ∽7×10¹⁵cm^-3 were measured at liquid helium temperatures in intense magnetic fields up to 90 kOe. In slightly doped crystals, whose carrier concentrations were about 3 ∽ 7 × 10¹⁵cm^-3, the magnetic field dependences of the Hall coefficient and the transverse magnetoresistance were found to be different from those in purer crystals. The results can be explained by assuming the existence of an impurity band and by taking into account the complicated structure of the Landau levels.