Molecular beam epitaxy and optical evaluation of AlxGa1-xAs

The epitaxial growth of Al_xGa_1-xAs on GaAs by the molecular beam vaporization method was investigated. The ratio of Al to Ga incorporated into the film was monitored by a mass spectrometer. Observations by reflection of high energy electron diffraction during growth and measurements of optical reflectivity suggest that it is possible to produce high quality Al_xGa_1-xAs single crystal thin films by the molecular beam method. Films grown with x varying from 0.1 to 0.47 were studied.