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Formation of copper silicides by high dose metal vapor vacuum arc ion implantation |
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| Authors: | Chun Rong Jizhong Zhang Wenzhi Li |
| Institution: | a Department of Materials Science and Engineering, School of Materials Research, Tsinghua University, Haidian District, Beijing 100084, China b International Center for Materials Physics, Academia Sinica, Shenyang 110015, China c The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China |
| Abstract: | Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 °C, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper–silicon interface that was applied in conventional studies of copper–silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD). |
| Keywords: | Copper silicides Ion implantation Defects |
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