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A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires
Affiliation:1. University of Athens, Physics Department, Solid State Section, Panepistimiopolis, 157 84 Zografos, Athens, Greece;2. Groupe de Physique des Solides, CNRS Universite Paris VI et Paris VII-2, place Jussieu, 75251, Paris Cedex 05, France;1. Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;2. Grupo de Materia Condensade-UdeA, Instituto de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Facultad de Ciencias, Universidad Autonóma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico;4. Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir, Turkey;1. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;2. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;3. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;4. Department of Physics, Politehnica University of Bucharest, 313 Splaiul Independentei, Bucharest RO-060042, Romania;1. Department of Physics, Baku State University, 23 Z. Khalilov st., AZ 1148, Baku, Azerbaijan;2. Institute of Physics, 131 H. Javid av., AZ 1143, Baku, Azerbaijan
Abstract:We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the photoluminescence and micro-photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-photoluminescence spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall photoluminescence spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed photoluminescence and micro-photoluminescence characteristics.
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