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Impurity bound states in a compensated quantum well
Affiliation:1. Eberswalde University for Sustainable Development, Applied Ecology and Zoology, Faculty of Forest and Environment, Alfred-Möller-Str. 1, 16225 Eberswalde, Germany;2. Landesamt für Umwelt Abteilung Großschutzgebiete, Regionalentwicklung (GR), Tramper Chaussee 2, 16225 Eberswalde, Germany;3. WWF - World Wide Fund for Nature, Reinhardtstr. 18, 10117 Berlin, Germany;1. Helmholtz-Zentrum Dresden – Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany;2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139-4307, United States;3. LEPABE, Department of Chemical Engineering, Faculty of Engineering, University of Porto, Portugal;4. Department of Mechanical Engineering, School of Mechanical and Manufacturing Engineering, National University of Sciences and Technology, Islamabad, Pakistan;1. Department of Genetic Medicine and Development, University of Geneva Medical School, 1 Rue Michel-Servet, 1211 Geneva, Switzerland;2. Institute of Genetics and Genomics in Geneva, 1211 Geneva, Switzerland;3. Institute for Information Transmission Problems (Kharkevich Institute), Russian Academy of Sciences, Moscow 127994, Russia;4. Swiss Institute of Bioinformatics, 1211 Geneva, Switzerland;5. New York Genome Center, Avenue of the Americas 101, New York, NY 10013, USA;6. Department of Systems Biology, Columbia University, 1130 St. Nicholas Avenue, New York, NY 10032, USA;7. Medical Research Council Functional Genomics Unit, Department of Physiology, Anatomy and Genetics, University of Oxford, Oxford OX1 3PT, UK;8. Wellcome Trust Centre for Human Genetics, University of Oxford, Oxford OX3 7BN, UK;9. School of Bioengineering and Bioinformatics, Moscow State University, Vorobievy Gory 1-73, Moscow 119992, Russia;10. Center of Excellence in Genomic Medicine Research, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Abstract:A detailed study of the bound-state properties of an impurity in a compensated semiconductor quantum well is presented using the screened potential of a minority impurity ion in a compensated semiconductor due to Schechter (1981). Accurate eigenenergies for the first 15 states are obtained for this potential as a function of the screening parameter λ by numerical integration of the two-dimensional (2D) Schrödinger equation. The energies are found to decrease with increasing values of the screening parameter λ in all cases. The variation of splitting between adjacent levels for the same value of n with the screening parameter is also studied.
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