Low temperature electron mobility in a coupled quantum well system |
| |
| Affiliation: | 1. Laboratoire de Physique et Modélisation des Milieux Condensés (UMR 5493), Université Grenoble Alpes and CNRS, Maison des Magistères, BP 166, 38042 Grenoble, France;2. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain;3. JARA Institute for Quantum Information, RWTH Aachen University, D-52056 Aachen, Germany;4. Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-41298 Göteborg, Sweden;1. Department of Physics, Xiamen University, Xiamen 361005, People''s Republic of China;2. College of Physics and Information Engineering, Quanzhou Normal University 362000, People''s Republic of China;3. Institute for Complex Adaptive Matter, University of California, Davis, CA 95616, USA;1. Department of Physics and Astronomy & Rochester Theory Center, University of Rochester, Rochester, NY 14627, USA;2. Institute for Quantum Studies, Chapman University, 1 University Drive, Orange, CA 92866, USA;1. State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People''s Republic of China;2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People''s Republic of China;3. Jinan Institute of Quantum Technology, SAICT, Jinan 250101, People''s Republic of China;1. Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706, USA;2. National Renewable Energy Laboratory, Golden, CO 80401, USA |
| |
| Abstract: | We study low temperature electron mobility μnin a GaAs/Alx Ga 1 − xAs coupled double quantum well structure. Both the extreme barriers are δ -doped with Si so that the electrons diffuse into the adjacent wells forming two sheets of two-dimensional electron gas (2DEG) separated by a thin central barrier. The subband electron wavefunctions and energy levels are numerically obtained as a function of the well width, barrier width and doping concentration. The screening of ionized impurity potential by the 2D-electrons is obtained in terms of the static dielectric response function within the random phase approximation (RPA). μnis calculated by solving the coupled Boltzmann equation in the relaxation time approximation. The coupling of wavefunctions through the barrier, screening of ionized impurities and intersubband scattering effects on μnare investigated. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
