Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors |
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| Institution: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China;2. Department of Electrical Engineering, Chien Kuo Institute of Technology, Changhua, Taiwan 50045, Republic of China;3. Department of Electrical Engineering, Oriental Institute of Technology, Taipei, Taiwan 22042, Republic of China;4. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China;1. INSPIRE Fellow (DST-GoI), Department of Remote Sensing, Birla Institute of Technology, Mesra, Ranchi 835215, Jharkhand, India;2. Centre for Land Resource Management, Central University of Jharkhand, Brambe, Ranchi 835205, India;3. School of Sciences, Indira Gandhi National Open University (IGNOU), Maidan Garhi, New Delhi 110068, India;1. Department of Anaesthesiology, Perioperative Medicine and General Intensive Care, Landeskrankenhaus, Uniklinikum Salzburg, Uniklinikum Salzburg, Müllner Hauptstraße 48, 5020, Salzburg, Austria;2. Department of Anaesthesiology and Pain Medicine, Inselspital, Bern University Hospital, University of Bern, Freiburgstrasse 18, 3010, Bern, Switzerland;3. University of Ljubljana, Faculty of Medicine, Kongresni trg 12, 1000, Ljubljana, Slovenia;4. Department of Anaesthesiology, Intensive Care and Pain Management, University Medical Centre Maribor, Ljubljanska ulica 5, 2000, Maribor, Slovenia;5. CINTESIS - Centre for Health Technology and Services Research, Faculty of Medicine, Alameda Prof. Hernâni Monteiro, 4200-319, Porto, Portugal;1. Division of Cancer Epidemiology, German Cancer Research Center (DKFZ), Heidelberg, Germany;2. Department of Genetics and Genome Biology, University of Leicester, UK;3. Fundación Pública Galega de Medicina Xenómica, Grupo de Medicina Xenómica (USC), Santiago de Compostela, Spain;4. Instituto de Investigación Sanitaria de Santiago de Compostela, Spain;5. Department of Radiation Oncology, Montpellier Cancer Institute, Université Montpellier, Inserm U1194, France;6. Institut de Recherche en Cancérologie de Montpellier, Montpellier Cancer Institute, Inserm U1194, France;7. Patient advocat, Hasselt, Belgium;8. Department of Human Structure and Repair, Ghent University, Belgium;9. Department of Radiation Oncology, Complexo Hospitalario Universitario de Santiago, SERGAS, Santiago de Compostela, Spain;10. Translational Radiobiology Group, Division of Cancer Sciences, University of Manchester, Manchester Academic Health Science Centre, Christie Hospital, UK;11. Prostate Cancer Program, Fondazione IRCCS Istituto Nazionale dei Tumori, Milan, Italy;12. Klinik für Strahlentherapie, Radiologische Onkologie und Palliativmedizin, ViDia Christliche Kliniken Karlsruhe, Germany;13. Department of Radiation Oncology, Candiolo Cancer Institute – FPO, IRCCS, TO, Italy;14. Centre for Cancer Genetic Epidemiology, Department of Oncology, University of Cambridge, Strangeways Research Labs, UK;15. Department of Radiation Oncology, CHU Nîmes, France;p. Oncogenetics Group, Vall d’Hebron Institute of Oncology (VHIO), Barcelona, Spain;q. Department of Radiation Oncology, Memorial Sloan Kettering Cancer Center, New York, USA;r. Leicester Cancer Research Centre, University of Leicester, UK;s. Department of Medical Physics, Complexo Hospitalario Universitario de Santiago, SERGAS, Santiago de Compostela, Spain;t. Radiation Oncology Department, Vall d''Hebron University Hospital, Barcelona, Spain;u. Centre for Integrated Genomic Medical Research (CIGMR), University of Manchester, UK;v. Department of Radiation Oncology, Department of Genetics and Genomic Sciences, Icahn School of Medicine at Mount Sinai, New York, USA;w. Maastricht University Medical Center, Department of Radiation Oncology (Maastro Clinic), GROW School for Oncology and Developmental Biology, Maastricht, the Netherlands;x. KU Leuven, Radiation Oncology, Leuven, Belgium;y. Department of Radiation Oncology 1, Fondazione IRCCS Istituto Nazionale dei Tumori, Milan, Italy;z. Strahlentherapie Speyer, Germany;11. Klinik für Strahlentherapie und Radiologische Onkologie, Klinikum der Stadt Ludwigshafen gGmbH, Germany;12. Department of Radiation Oncology, Universitätsklinikum Mannheim, Medical Faculty Mannheim, University of Heidelberg, Mannheim, Germany;13. Independent Cancer Patients’ Voice, UK;14. Department of Oncology and Haematology-Oncology, University of Milan, Italy;15. Biomedical Network on Rare Diseases (CIBERER), Spain;16. Department of Radiation Oncology, Ghent University Hospital, Belgium;17. Trustee Pelvic Radiation Disease Association, NCRI CTRad Consumer, UK;18. Zentrum für Strahlentherapie Freiburg, Germany;19. University Cancer Center Hamburg, University Medical Center Hamburg-Eppendorf, Germany;1. Department of Chemical Engineering, Universitas Syiah Kuala, 23111 Banda Aceh, Indonesia;2. Research Center for Environmental and Natural Resources, Universitas Syiah Kuala, Banda Aceh 23111, Indonesia |
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| Abstract: | In this work, the off-state breakdown characteristics of two different types InGaP-based high-barrier gate heterostructure field-effect transistors are studied and demonstrated. These devices have different high-barrier gate structures, e.g. the i-InGaP layer for device A and n + - GaAs/p + -InGaP/n-GaAs camel-like structure for device B. The wide-gap InGaP layer is used to improve the breakdown characteristics. Experimentally, the studied devices show high off-state breakdown characteristics even at high temperature operation regime. This indicates that the studied devices are suitable for high-power and high-temperature applications. In addition, the off-state breakdown mechanisms are different for device A and B. For device A, off-state breakdown characteristics is only gate dominated at the temperature regime from 30 to 180 ° C. For device B, off-state breakdown characteristics are gate and channel dominated at 30 ° C and only gate dominated within 150 to 210 ° C. |
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