The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum-well structure |
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| Institution: | 1. Physical Therapy Program, Department of Physical Medicine and Rehabilitation, University of Colorado, Aurora, CO;2. Colorado School of Public Health, University of Colorado, Aurora, CO;3. Colorado Multi-Institutional Review Board (COMIRB), University of Colorado School of Medicine, Aurora, CO;4. Division of Geriatric Medicine, Department of Medicine, University of Colorado, Aurora, CO;5. Department of Medicine, University of Colorado, Aurora, CO;6. Veterans Affairs Geriatric Research, Education and Clinical Center, Aurora, CO;7. Division of Hospital Medicine, University of Colorado, Aurora, CO;8. Indiana University School of Medicine, Indianapolis, IN;9. University of Utah, College of Nursing, Salt Lake City, UT;10. Rocky Mountain Regional Medical Center, Aurora, CO;11. Program of Post-Acute and Long-Term Care, School of Medicine, University of Colorado, Aurora, CO;1. School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shaanxi 710069, PR China;2. School of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shaanxi 710069, PR China;1. Department of Physics, Shanghai University, Shanghai 200444, China;2. Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia;1. School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China;2. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China |
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| Abstract: | The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the electric field generated by the photon-drag effect in a typical GaAs–AlGaAs two-dimensional system is enhanced by almost one order of magnitude as compared with that of a bulk system. Moreover, the results can qualitatively account for the observed absorption spectra due to intersubband electronic transitions occurring in GaAs quantum wells. |
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