Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor |
| |
| Affiliation: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, 70101, Republic of China;2. Department of Electrical Engineering, Chien Kuo Institute of Technology, Changhua, Taiwan, Republic of China;3. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, 70101, Republic of China;4. Department of Electrical Engineering, Oriental Institute of Technology, 58, Sze-Chuan Road, Sec.2, Pan-Chiao, Taipei Hsien, Taiwan, Republic of China;5. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, 70101, Republic of China;1. Ege University, Graduate School of Natural and Applied Sciences, Dept. of Biomedical Technologies, 35040, Turkey;2. Dokuz Eylül University, Graduate School of Natural and Applied Sciences, Dept. of Biomedical Technologies, 35390, Turkey |
| |
| Abstract: | A novel photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) is fabricated and demonstrated. Due to the appropriately designed narrow base width and the employment of a δ -doped sheet at the emitter–base (E–B ) heterojunction, the base resistance effect results in the significant NDR phenomenon. In addition, the experimental results show that the device studied is very sensitive to the applied light source. The N-shaped NDR phenomena are clearly observed under illumination. This phenomenon is attributed to the base resistance and barrier lowering effect resulting from holes induced by the applied light source. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
