|
|||||
|
|
Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor |
|
| Authors: | XU Cheng LIU Bo CHEN Yi-Feng LIANG Shuang SONG Zhi-Tang FENG Song-Lin WAN Xu-Dong YANG Zuo-Ya XIE Joseph CHEN Bomy |
| Affiliation: | Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 Graduate School of the Chinese Academy of Sciences, Beijing 100049Semiconductor Manufacturing International Corporation, Shanghai 201203Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
| Abstract: | |
| Keywords: | 73.61.Jc 61.72.Uj 87.15.Zg 85.30.Tv |
| 本文献已被 维普 等数据库收录！ | |
| 点击此处可从《中国物理快报》浏览原始摘要信息 | |
| 点击此处可从《中国物理快报》下载免费的PDF全文 | |