| 应变层异质结ZnS／ZnSe的价带带阶 |
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| 引用本文： | 蔡淑惠,郑金成.应变层异质结ZnS／ZnSe的价带带阶[J].半导体光电,1998,19(4):252-255. |
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| 作者姓名： | 蔡淑惠 郑金成 |
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| 作者单位： | 厦门大学 |
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| 摘 要： | 采用基于ＬＭＴＯ－ＡＳＡ的平均结合能计算方法，研究了在ＺｎＳｘＳｅ１－ｘ衬底上沿（００１）方向外延生长的应变层异质结ＺｎＳ／ＺｎＳｅ的价带带阶值。研究表明，应变的结果使价带带阶随衬底组分（ｘ）的变化呈非线性且单调的关系；与其他理论计算和实验结果比较，本文的计算结果比较理想。
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| 关 键 词： | 半导体材料 异质结 平均结合能 价带带阶 |
Valence-band offsets of strained heterojunction ZnS/ZnSe |
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| CAI Shuhui,ZHENG Jincheng,WANG Renzhi,ZHENG Yongmei.Valence-band offsets of strained heterojunction ZnS/ZnSe[J].Semiconductor Optoelectronics,1998,19(4):252-255. |
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| Authors: | CAI Shuhui ZHENG Jincheng WANG Renzhi ZHENG Yongmei |
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| Abstract: | The valence-band offsets (VBO) of strained heterojunction ZnS/ZnSe as a function of the alloy composition x of ZnS x Se 1- x substrates are studied using the average-bond-energy theory based on LMTO-ASA method.It is shown that the strain leads to the nonlinear and monotonous variation of VBO's with x . The calculation results are more desirable compared with the theoretical and experimental data previously reported. |
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| Keywords: | Semiconductor Materials ZnS/ZnSe Heterojunction Average-bond-energy Valence-band Offsets |
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