Carrier-induced changes in the phase resolved reflection of GaAs quantum wells |
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| Authors: | Ch Nacke H Stolz G Manzke K Henneberger |
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| Institution: | Universit?t Rostock, Fachbereich Physik, 18051 Rostock, Germany, DE
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| Abstract: | The influence of thermalized non-coherent carriers on the dielectric function of GaAs/AlAs quantum wells is investigated by
reflection spectroscopy. Experiments are performed using the method of spectral interferometry, where both amplitude and phase
of reflected pulses can be determined. For low excitation density the complex coefficient of reflection can be described using
as dielectric function a broadened Elliot formula. With increasing carrier density pronounced nonlinearities appear in both
amplitude and phase due to many-body effects between excited carriers. The nonlinear behavior fits very well to the results
of a many-body theory based on the Semiconductor Bloch equations including memory effects in the scattering processes between
carriers and the polarization induced by the probe pulse.
Received 29 May 2002 / Received in final form 23 September 2002 Published online 19 December 2002
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ID="a"e-mail: manzke@physik3.uni-rostock.de |
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| Keywords: | PACS 71 35 -y Excitons and related phenomena – 71 45 Gm Exchange correlation dielectric and magnetic response functions plasmons – 78 20 -e Optical properties of bulk materials and thin films – 78 67 De Quantum wells |
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