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Synthesis and characterisation of co-evaporated tin sulphide thin films |
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| Authors: | N. Koteeswara Reddy K. Ramesh R. Ganesan K.T. Ramakrishna Reddy K.R. Gunasekhar E.S.R. Gopal |
| Affiliation: | (1) Department of Physics, Indian Institute of Science, Bangalore, 560 012, India;(2) Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India;(3) Department of Instrumentation, Indian Institute of Science, Bangalore, 560 012, India |
| Abstract: | Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices. PACS 78.40.Fy; 68.60.-p; 61.10.Nz; 68.55.-a; 78.66.-w |
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