One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography |
| |
| Authors: | W Wu G-Y Jung DL Olynick J Straznicky Z Li X Li DAA Ohlberg Y Chen S-Y Wang JA Liddle WM Tong R Stanley Williams |
| |
| Institution: | (1) Quantum Science Research, HP Labs, Hewlett-Packard Company, Palo Alto, CA 94304, USA;(2) Lawrence Berkeley National Lab, 1 Cyclotron Road, M/S 2-400, Berkeley, CA 94720, USA;(3) School of Engineering and Applied Science, University of California, Los Angeles, CA 90095-1597, USA;(4) Technology Development Operations, InkJet Printing Group, Hewlett-Packard Company, 1000 Circle Boulevard, Corvallis, OR 97330, USA |
| |
| Abstract: | We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated. PACS 85.40.Hp; 81.07.-b; 81.16.Nd; 85.65.+h |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
