Photosensitivity and Schottky barrier height in Au-n-GaAs structures

The photosensitivity spectra of Au-n-GaAs Schottky barriers obtained by the chemical method are studied in the spectral range 0.9–2.2 eV. The barrier height is determined for the structures exposed on the side of the semitransparent Au layer and on the opposite side of GaAs at T = 300 K. It is found that, as the structures are illuminated on the side of GaAs, their photosensitivity in the Fowler spectral region, hν = 0.95–1.25 eV, is approximately one order of magnitude higher than when the barrier contact is illuminated. This circumstance may find use in studying the fundamental properties of the metal-semiconductor and metal-insulator-semiconductor interfaces, as well as in elaboration of new semiconductor devices.