中能电子成像仪探头的设计

利用小孔成像原理对中能电子成像仪探头的机械结构进行了设计,为保证探头单元暴露于外辐射带辐射环境12年的总剂量小于5krad,确定其壳体厚度为约3mm的铜,探头的角分辨率为20°;根据带电粒子在硅中的能量损失规律对探测器进行了防质子污染设计,确定了探测器厚度为1000μm,其屏蔽层厚度为10μm等效硅。最后对设计探头的质子污染率进行了计算,结果表明该中能电子成像仪探头的设计满足外辐射带空间中能电子探测的需求,为中能电子成像仪的研制奠定了基础。

Detector design of medium-energy electron imaging

The mechanical structure of electronic imaging device was designed by the principle of pinhole imaging in this paper. To ensure the total dose of the probe unit was less than 5 krad in 12 years, the thickness of the shell was about 3 mm copper and the angular resolution of the probe was 20. The detector of anti-proton contamination was designed according to the law of the charged particle energy loss in silicon, the thickness of the detector and the shielding layer was determined. The thickness of the detector is 1000 m and the shielding layer thickness is 10 m (equivalent silicon). By calculation, the design of the electronic imager probe meets the needs of medium-energy electronic detection in space, and lays the foundation for the development of medium-energy electronic imager.