The electrical transport behavior of Zn-treated Zn1-xMnxO bulks |
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Authors: | Peng Xian-De Zhu Tao Wang Fang-Wei Huang Wan-Guo and Cheng Zhao-Hua |
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Institution: | Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics, Chinese Academy of Sciences,
Beijing
100190,
China |
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Abstract: | Zn1-xMnxO bulks have been prepared by the solid state
reaction method. Zn vapor treatment has been carried out to adjust
the carrier concentration. For the Zn treated Zn1-xMnxO
bulks, analysis of the temperature dependence of resistance and the field
dependence of magnetoresistance demonstrates that the bound magnetic
polarons (BMPs) play an important role in the electrical transport
behavior. The hopping of BMPs dominates the electrical conduction
behavior when temperature is below 170~K. At low temperature,
paramagnetic Zn1-xMnxO bulks show a large
magnetoresistance effect, which indicates that the large
magnetoresistance effect in transition-metal doped ZnO dilute
magnetic semiconductors is independent of their magnetic states. |
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Keywords: | Mn doped ZnO x-ray resistance magnetoresistance |
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