首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Structural rearrangements in triple-decker-like complexes with mixed group 15/16 ligands: synthesis and characterization of the redox couple
Authors:Blacque O  Brunner H  Kubicki M M  Leis F  Lucas D  Mugnier Y  Nuber B  Wachter J
Institution:Laboratoire de Synthèse et d'Electrosynthèse Organométalliques (UMR 5632), Université de Bourgogne, Dijon, France.
Abstract:The reaction of As4Se4 with stoichiometric amounts of Cp*Fe2(CO)4] (Cp* = C5Me5) in boiling toluene forms Cp2*Fe2As2Se2] (1) in good yield. X-ray crystallography shows 1 to have a triple-decker structure which comprises a tetraatomic mu,eta4:4-As2Se2 ligand. Density functional theory (DFT) and extended Hückel molecular orbital (EHMO) calculations confirm that the As2Se2 ligand behaves as a four-electron pi donor. Oxidation of 1 with equimolar amounts of (C5H5)2Fe]PF6, Br2 and I2, respectively, gave compounds 2-4. According to X-ray crystallographic investigations that were carried out on 2 and 4, the oxidation state has a considerable influence on the structure of the Fe2As2Se2 core: significant shortening of the Fe-Fe distance (deltad(Fe-Fe)> 0.3 A) and weakening of the As-As bond length ((deltad(As-As) > 0.3 A) suggests the formal presence of two diatomic AsSe ligands and a Fe-Fe bond. DFT and EHMO calculations confirm that an electron is removed from an occupied Fe-Fe orbital of antibonding character during oxidation. All molecular orbitals lower their energies upon oxidation, but the energy drop is relatively small for those involving the As-As bond. An additional structural feature in 4 consists of an electronic interaction of the iodide with both As atoms which suggests a formally neutral ion pair. Electrochemical studies confirm that the oxidation of 1 is a reversible one-electron process with E(1/2)= +0.07 V (in THF). These studies also reveal that 4 dissociates in polar solvents, such as THF, into 1]+ and I-, which is followed by transformation into 1 and I3.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号