| 溅射功率对Au与CdZnTe晶体接触结构和性能的影响 |
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| 引用本文： | 张兴刚,刘正堂,孙金池,闫锋,刘文婷.溅射功率对Au与CdZnTe晶体接触结构和性能的影响[J].半导体光电,2006,27(5):569-572. |
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| 作者姓名： | 张兴刚 刘正堂 孙金池 闫锋 刘文婷 |
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| 作者单位： | 西北工业大学,材料学院,陕西,西安,710072;西北工业大学,材料学院,陕西,西安,710072;西北工业大学,材料学院,陕西,西安,710072;西北工业大学,材料学院,陕西,西安,710072;西北工业大学,材料学院,陕西,西安,710072 |
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| 基金项目： | 国防科技应用基础研究基金 |
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| 摘 要： | 采用直流磁控溅射工艺,以Au为靶材在高阻半导体CdZnTe上制备导电薄膜.系统地研究了溅射功率对沉积速率、薄膜结构、组织形貌及接触性能的影响.结果表明,随溅射功率的增加沉积速率增大.I-V测试表明在高阻CdZnTe上溅射Au薄膜后不经热处理已具有良好的欧姆接触性能,溅射功率为100 W时的接触性能好于功率为40 W和70 W时的接触性能.
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| 关 键 词： | 磁控溅射 溅射功率 Au导电薄膜 CdZnTe半导体 欧姆接触 |
| 文章编号： | 1001-5868(2006)05-0569-04 |
| 收稿时间： | 2005-12-09 |
| 修稿时间： | 2005年12月9日 |
Influences of Sputtering Power on Contact Structure and Performance of Au Films and CdZnTe Crystal |
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| ZHANG Xing-gang,LIU Zheng-tang,SUN Jin-chi,YAN Feng,LIU Wen-ting.Influences of Sputtering Power on Contact Structure and Performance of Au Films and CdZnTe Crystal[J].Semiconductor Optoelectronics,2006,27(5):569-572. |
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| Authors: | ZHANG Xing-gang LIU Zheng-tang SUN Jin-chi YAN Feng LIU Wen-ting |
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| Abstract: | Au film has been deposited on CdZnTe semiconductor with high resistivity by DC magnetron sputtering. The influences of the sputtering power on deposition rate,film structure , and contact performance of the film prepared on CdZnTe substrate have been investigated. It is shown that the deposition rate of Au film is firstly increased and then decreased subsequently with the increase of sputtering power. I-V test shows that the ohmic contact properties are well even though without heat treatment. The ohmic contact properties under sputtering power of 100 W are better than those under sputtering power of 40 and 70 W, respectively. |
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| Keywords: | magnetron sputtering sputtering power Au conductive film CdZnTe semiconductor ohmic contact |
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