Synthesis of hexagonal boron nitride thin film on Pt substrates for resistive switching memory applications |
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Institution: | 1. College of Science, Jinling Institute of Technology, Nanjing, 211169, China;2. College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China |
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Abstract: | Hexagonal boron nitride (hBN), due to its high reliability as a two-dimensional (2D) dielectric material, has attracted much attention for its potential applications in nanoelectronic devices. Here, the use of radio frequency (RF) magnetron sputtering-grown hBN films to construct hBN-based resistive switching (RS) memory device is reported, and the RS mechanism is deduced. The hBN-based RS memory shows low operating voltage, reproducible write cycles, and long retention time. First-principles simulations further confirm the resistive switching. This work provides an important case to facilitate the future applications of 2D materials in the RS memory. |
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Keywords: | Resistive switching Boron nitride Sputtering Electrical properties Thin films |
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