Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET

The favorable electrostatic potential and tunneling underneath the overall gate region, which prevents legitimate source to drain tunneling, controllability over the gate is assisted in vertical TFET configurations. An L-TFET (L-shaped Tunneling Field-Effect Transistor) has a larger tunneling length than a veritable TFET. As a consequence, the current in the on-state (I_on) has gotten better. The increased ambipolar current and low I_on/I_off ratio of L-TFET will need to be tuned for low-power and high-frequency functionality. On the other hand, significantly worse switching performance and distortions may lead to a weak robust device. By establishing a high-k gate oxide-based drain underlap region with dual gate, this study is dedicated to ameliorating the I_on/I_off by subverting ambipolar behavior. To investigate the impact of height of second gate (H_gate2) and work-function of this (WF_gate2), EBD (Energy Band Diagram), electric field distribution in X and Y direction, potential and recombination rate are examined under various conditions. Which leads to enhanced DC/RF and linearity performance. Along with this, Current-Voltage characteristics, DC/RF, and linearity performance Figure of Merits (FOMs) also investigated the assessment of variation of H_gate2 and WF_gate2, and it is optimized for the better suppression of I_ambi (ambipolar current) with a steep slope in transfer characteristics. In addition to that, Current-voltage statistics (I_ds − V_gs), DC/RF, and linearity efficiency FOMs were being used to assess the influence of changing the H_gate2 and WF_gate2, which was modulated for greater I_ambi suppression (ambipolar current) with improved SS and V_th for the proposed device.