|
|||||
|
|
Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications |
|
| Institution: | 1. Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India;2. Optoelectronic Materials and Devices Lab, Department of Physics, National Institute of Technology, Tiruchirappalli, 620 015, India;3. Department of Physics, SRM University, Amaravati, 522240, AP, India;4. SSN Research Centre, Sri Sivasubramaniya Nadar College of Engineering, Kalavakkam, 603110, India |
| Abstract: | The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd:BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd:BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd:BFO thin films have a higher Fe 3+/Fe 2+ratio and less oxygen vacancy (VO) defects which enriches the ferroelectric characteristics in Nd:BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd:BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P r) of 0.21 μC/cm2 and stable RS characteristics. |
| Keywords: | Ferroelectrics Resistive switching ReRAM |
| 本文献已被 ScienceDirect 等数据库收录！ | |