Electrophysical properties of In2O3-and WO3-based gas-sensitive semiconducting films as sensors for unsymmetrical dimethylhydrazine in air |
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| Authors: | T V Belysheva E A Kazachkov L P Bogovtseva V N Kubyshkin V M Vokhontsev |
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| Institution: | (1) Karpov Research Institute of Physical Chemistry, ul. Vorontsovo pole 10, Moscow, 103064, Russia;(2) Research and Development Center of Ecological Problems, ul. Kosmonavta Volkova 22, Moscow, 125299, Russia |
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| Abstract: | Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. The sensors are highly sensitive to the presence of UDMH vapors in air at concentrations equal to or lower than the MPC. They have short response and relaxation times in detecting UDMH vapors in air. It was found that, when ammonia was present in air in concentrations comparable to those of UDMH, it did not affect the electrophysical properties of the semiconductor sensors. |
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