提高(100)晶向磷化铟单晶的成晶率和质量的研究

通过对高压液封直拉法单晶生长过程的热传输和影响熔体温度起伏的几个关键因素的分析,研究适合生长(100)晶向磷化铟单晶的热场系统,有效地降低了孪晶产生的几率,重复地生长出了整锭掺硫和掺铁的、直径为50mm和76mm的(100)磷化铟单晶.测试结果表明我们生长(100)磷化铟单晶的热场在生长过程中使晶锭保持较为平坦的固液界面,可稳定地获得具有低的缺陷密度和良好的电学均匀性的高质量磷化铟单晶材料.

Improvement of the Quality and Yield of InP Single Crystal with (100) Orientation

Twin-free (100)InP single crystals with 50mm and 76mm diameter were grown reproducibly through the optimization of thermal field. The thermal field was studied by an analysis of the heat transfer and a few key factors influencing the temperature fluctuation of the melt in the liquid encapsulated Czochralski (LEC) process. The solid-liquid (SL) interface of InP crystal is kept flat as revealed by observation of impurity striation. InP wafer with good electrical uniformity and low dislocation density can be obtained.