Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

Authors:	H. Hiramatsu K. Ueda K. Takafuji H. Ohta M. Hirano T. Kamiya H. Hosono

Affiliation:	(1) Hosono Transparent Electro-Active Materials Project, ERATO, Japan Science and Technology Agency, Tokyo, Japan;(2) Materials and Structures Laboratory, Tokyo Institute of Technology, Tokyo, Japan

Abstract:	Electrical and photoluminescence properties were investigated for epitaxial films of layered oxychalcogenides, LnCuOCh (Ln=La, Pr, and Nd, Ch=S or Se). Epitaxial films of Mg 10 at.% doped LaCuOS_1-xSe_x are the first demonstration of degenerate conduction with high hole concentration >10²⁰ cm^-3 in wide gap p-type semiconductors. Ion substitution varied the excitonic emission energy from 3.21 eV to 2.89 eV while lanthanide and chalcogenide ion substitutions displayed the opposite tendency against cell volume. These unique properties are discussed with respect to the electronic structure originating from the layered crystal structure. PACS 72.20.-i; 73.50.-h; 78.55.Hx; 78.66.-w

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