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Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires
Authors:Fu Xiu-Li  Peng Zhi-Jian  Tang Wei-Hua  Guo Xi
Affiliation:Faculty of Science, Beijing University of Posts and Telcommunications, Beijing 100876, China; School of Engineering and Technology, China University of Geosciences, Beijing 100083, China; Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
Abstract:We report on the synthesis and the characterisation ofmetal/semiconductor hybrids consisting of self-assembled CdSnanoparticles on Cd nanowires, which are grown by thermalevaporation of the mixture of CdS and Cr. The growth of the hybridsis attributed to the decomposition of CdS at high temperature andthe strain relieving that arises mainly from the lattice mismatchbetween Cd and CdS. Temperature dependence of zero-field resistanceof single nanohybrid indicates that the as-produced Cd/CdSnanohybrid undergoes a metal--semiconductor transition as a naturalconsequence of hybrid from metallic Cd and semiconducting CdS. Themetal/semiconductor hybrid property provides a promising basis forthe development of novel nanoelectronic devices.
Keywords:metal/semiconductor nanohybrids  electrical properties   thermal evaporation
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