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Features of high-power ion beam irradiation of nanoporous Si and SiO2
Authors:V. S. Kovivchak   R. B. Burlakov  N. A. Davletkil’deev
Affiliation:1.Omsk Branch, Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Omsk,Russia;2.Omsk State University,Omsk,Russia
Abstract:Nanoporous Si and SiO2 melting observed under high-power ion beam irradiation of nanosecond duration was investigated. The sizes of ellipsoidal particles formed in Si and those of holes formed in SiO2 under irradiation were determined. The possible origin of these morphology features was discussed.
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