| The optical properties of MgxZnl-xO thin films |
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| 引用本文： | 张锡健,马洪磊,李玉香,王卿璞,马 瑾,宗福建,肖洪地. The optical properties of MgxZnl-xO thin films[J]. 中国物理, 2006, 15(10): 2385-2388 |
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| 作者姓名： | 张锡健 马洪磊 李玉香 王卿璞 马 瑾 宗福建 肖洪地 |
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| 作者单位： | School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China;School of Physics and Microelectronics, Shandong University, Jinan 250100, China |
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| 基金项目： | Project supported by the Doctoral Program Foundation of StateEducation Department (Grant No20020422056). |
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| 摘 要： | MgxZn1-xO thin films have been prepared on silicon substrates by radiofrequency magnetron sputtering at 60℃. The thin films have hexagonalwurtzite single-phase structure and a preferred orientation with the c-axisperpendicular to the substrates. The refractive indices of MgxZn1-xO filmsare studied at room temperature by spectroscopic ellipsometry over the wavelengthrange of 400--760,nm at the incident angle of 70℃. Both absorptioncoefficients and optical band gaps of MgxZn1-xO films are determined bythe transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increasefrom 3.24.eV at x=0 to 3.90,eV at x=0.30. These results provide importantinformation for the design and modelling of ZnO/ MgxZn1-xO heterostructureoptoelectronic devices.
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| 关 键 词： | MgxZn1-xO薄膜 光学性 溅射 薄膜物理学 |
| 收稿时间： | 2006-01-18 |
| 修稿时间： | 2006-01-182006-03-23 |
The optical properties of MgxZn1-xO thin films |
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| Zhang Xi-Jian,Ma Hong-Lei,Li Yu-Xiang,Wang Qing-Pu,Ma Jin,Zong Fu-Jian and Xiao Hong-Di. The optical properties of MgxZn1-xO thin films[J]. Chinese Physics, 2006, 15(10): 2385-2388 |
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| Authors: | Zhang Xi-Jian Ma Hong-Lei Li Yu-Xiang Wang Qing-Pu Ma Jin Zong Fu-Jian Xiao Hong-Di |
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| Affiliation: | School of Physics and Microelectronics, Shandong University, Jinan 250100, China |
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| Abstract: | MgxZn1-xO thin films have been prepared on silicon substrates by radiofrequency magnetron sputtering at 60℃. The thin films have hexagonalwurtzite single-phase structure and a preferred orientation with the c-axisperpendicular to the substrates. The refractive indices of MgxZn1-xO filmsare studied at room temperature by spectroscopic ellipsometry over the wavelengthrange of 400--760,nm at the incident angle of 70℃. Both absorptioncoefficients and optical band gaps of MgxZn1-xO films are determined bythe transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increasefrom 3.24.eV at x=0 to 3.90,eV at x=0.30. These results provide importantinformation for the design and modelling of ZnO/ MgxZn1-xO heterostructureoptoelectronic devices. |
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| Keywords: | MgxZn1-xO films optical properties sputtering |
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