Evaluation of Limiting Characteristics of Laser Separation of Silicon Isotopes |
| |
Authors: | A. M. Prokhorov V. V. Buchanov M. A. Kazaryan M. M. Kalugin |
| |
Affiliation: | (1) Institute of General Physics, Russian Academy of Sciences, Ul. Vavilova, 38, Moscow, 117942, Russia;(2) SKB Lazust, Volokolamskoe Shosse 95, Moscow, 123424, Russia;(3) P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Pr. 53, Moscow, 119991, Russia;(4) Scanning Lasers Enterpise, Ul. Leningradskaya 16-29, Sosnovyi Bor, Leningrad Region, 188537, Russia |
| |
Abstract: | Isotopically selective photoionization of silicon atoms by laser radiation using tunable dye lasers is considered. The scheme of atomic ionization with two-photon excitation via the resonance level of one of the high states with subsequent excitation of the autoionization state is proposed. The calculations carried out show that the up-to-date development of laser facilities allows one to evaluate the ultimate production of the highly enriched 28Si isotope at a level of 0.1 g/h at a radiating power of 1 W for each wavelength. The excitation selectivity appears to be high (about 100) within the framework of the radiation problem and is actually defined by the conditions of ion extraction, background atom concentration, charge exchange, and so on rather than by the radiation processes. |
| |
Keywords: | atomic vapor lasers isotopes isotope separation selectivity silicon |
本文献已被 SpringerLink 等数据库收录! |
|