Influence of degeneracy on momentum relaxation times in semiconductors

We have studied the effect of degeneracy on momentum relaxation times under ohmic as well as non-ohmic conditions. We find that a proper momentum relaxation time, within the framework of the Boltzmann transport equation, can no longer be defined for isotropic but inelastic scattering when the carriers are hot whereas under ohmic conditions it can be defined and is appreciably altered by degeneracy. For elastic scattering the momentum relaxation time is found to be unaffected by degeneracy for both ohmic and non-ohmic regimes.