Energy gap and transition temperature of highly disordered and amorphous thallium- and indium-films |
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Authors: | A Comberg S Ewert G Bergmann |
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Institution: | 1. 2. Physikalisches Institut der Rheinisch-Westf?lischen Technischen Hochschule, Aachen, Germany 2. Institut für Festk?rperforschung der Kernforschungsanlage Jülich, Jülich, Germany
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Abstract: | Thin and pure Tl-films and In-films with different impurities (Ag, Te, Ge, Sb) are condensed onto a cooled substrate at 4 K. Measurements of the energy gap by means of the tunnel effect and the transition temperature of the weak-coupling superconductor thallium are carried out as a function of the degree of disorder of the films. The ratioα=2Δ 0/kT c increases proportional to the reciprocal mean free path from 3.5 for the annealed film up to 3.8 for the highly disordered film. For In-films condensed by quenching with impurity additions, one finds a linear relation between energy gap and transition temperature. In-films with Sb-additive are obtained in an amorphous phase with a ratioα=2Δ 0/kT c of 4.4. The amorphous state of the In/Sb-films is confirmed by measurements of the electric conductivity and the Hall-effect. |
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