The decay of115 mIn

The decay of^115m In has been investigated using accurate counting methods. The emission rate of conversion electrons plusβ ^?-particles was determined with a 4π proportional flow counter. The total andK-shell internal conversion coefficients of the 336 keVγ-ray in¹¹⁵In were measured by the electron X-ray coincidence method using combinations of a Si surface barrier with a NaI(Tl) detector and of a magneticβ-spectrometer with a high energy resolution Si(Li) detector, respectively. The conversion ratioR=K/(L+M+...) was deduced from electron spectra recorded with the magneticβ-spectrometer. The 336 keVγ-ray emission rate of all used sources was determined with a calibrated NaI(Tl)γ-ray spectrometer. A Ge(Li) detector has been used to determine the relative intensity of the 497 keVγ-ray in¹¹⁵Sn. As results have been deduced the 336 keVγ-ray emission per decay (N _γ1/N ₀=(45.9 ± 0.1)%), the total internal conversion coefficient (α=1.073 ± 0.014), theK-shell internal conversion coefficient (α _K=0.843±0.012), the conversion ratioR=3.63±0.07, theβ ^?-transition per decay going to the ground state (N _β1/N ₀=(5.0 ± 0.7)%) and to the first excited level in¹¹⁵Sn¹¹⁵Sn(N _β2/N ₀=(0.047 ± 0.002)%), and the 497 keVγ-ray emission (N _γ2/N _γ1=(0.103 ± 0.004)%). From the obtained internal conversion data it follows that the 336 keVγ-ray transition is ofM4 character with anE5 admixture of less than (3.5±1.5)%. The half-life of the isomeric state¹¹⁵ mIn has been determined with four different methods. The result isT _1/2=(4.486±0.004) h.