Colossal magnetoresistance in pulsed laser-deposited thin ceramic films |
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| Affiliation: | 1. Materials for Information Technology Center, The University of Alabama, Tuscaloosa, AL 35487-0209, USA;2. Department of Electrical Engineering, The University of Alabama, Tuscaloosa, AL 35487-0209, USA;3. Department of Chemistry, The University of Alabama, Tuscaloosa, AL 35487-0209, USA;4. Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, CO 80303, USA;5. Department of Applied Physics, University of Hull, Hull, HU6 7RX, UK;1. CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China;3. Department of Physics, The University of Hong Kong, Hong Kong, China;4. Research School of Chemistry, The Australian National University, ACT, 2601, Australia;1. CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;3. School of Electrical and Computer Systems Engineering, RMIT University, Melbourne 3001, Australia;1. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2. Nanotec—KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002, Thailand;3. Integrated Nanotechnology Research Center (INRC), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;4. Institute of Science, School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand;1. CNRS, Institut Carnot CIRIMAT, UMR CNRS-UPS-INP 5085, Université Paul-Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 9, France;2. Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA;3. Korea Institute of Industrial Technology (KITECH), 137-41 Gwahakdanji-ro, Gangneung-si, Gangwon-do 25440, Republic of Korea |
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| Abstract: | Films of La100−xCaxMnOz, where x = 34, 40 and 50, with perovskite structure, have been prepared by pulsed laser deposition. The films are non-epitaxial, polycrystalline and have cubic crystal structure at room temperature. The temperature variation of resistivity shows no evidence of an electrical phase transformation. The highest CMR observed is near 1800% at 55 K in a maximum applied field of 70 kOe (5600 kA/m). The results of temperature variation of susceptibility, hysteresis, resistivity and CMR properties follow a self-consistent behaviour. |
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