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Type-I and type-II Wannier-Stark effect in InGaAs/InGaAs superlattices
Authors:R Schwedler  F Brüggemann  A Kohl  K Wolter  K Leo  H Kurz
Institution:(1) Institut für Halbleitertechnik, RWTH Aachen, Sommerfeldstrasse 24, D-52074 Aachen, Germany
Abstract:The formation of minibands is demonstrated in photocurrent experiments on shallow In0.53Ga0.47As/In0.40Ga0.60 As superlattices grown by low-pressure metal-organic vapor-phase epitaxy. Field-dependent variations of the spectral shape are attributed to Wanner-Stark localization. Both type-I transitions between electrons and heavy holes and type-II transitions involving light holes confined in the In0.40Ga0.60 As layers are observed and distinguished by their characteristic field dependence.
Keywords:73  60  Br  78  65  Fa  81  10  Bk
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