Beiträge zum thermischen Verhalten von Sulfaten. XII. Zum chemischen Transport von In2(SO4)3 mit Cl2 und mit HCl. Experimente und Modellrechnungen

Contributions on the Thermal Behaviour of Sulfates XII. The Chemical Vapour Transport of In₂(SO₄)₃ with Cl₂ and HCl. Experimental Results and Calculations By means of CVT (T₁ between 500°C and 825°C; ΔT = 50°C), well shaped crystals of anhydrous In₂(SO₄)₃ can be grown in the less hot region of a closed silica ampoule. We investigated the dependence of the deposition rate on the variation of the concentration of the transport agent (system In₂(SO₄)₃/Cl₂) and on the variation of the transport temperature (In₂(SO₄)₃/Cl₂ as well as In₂(SO₄)₃/HCl). A comparison of the experimental results with thermodynamical calculations shows a satisfying agreement. The influence of the variation of some additional parameters (H₂O from the wall of the ampoule; Δ_BH(In₂(SO₄)₃)) on the deposition rate is discussed.