Photoluminescence from CdS Quantum Dots in Silica Gel

CdS semiconductor nanocrystals were grown as quantum dots (QDs) inside a silica matrix obtained by the sol-gelmethod and assisted in the mother liquid by high powerultrasounds. Small-angle neutron scattering (SANS) accountsfor a 3.6 nm crystal size homogeneously distributed. Optical excitation from the third harmonic of a Nd:YAG ns laser wasfocused on the sample to study the photoluminescence (PL) atroom temperature. The PL spectrum shows radiative processfrom intrinsic transitions and a broad band corresponding tothe traps. Variable stripe length (VSL) method was used to measure the optical gain spectra by the growth of theamplified luminescence. A broad optical gain spectrumproduced by the biexciton-exciton transitions revealing thestimulated emission from the CdS QDs. It is also observed ared-shift of the PL emission crystal size-dependent.