Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.