Thermal analysis, Raman spectroscopy and complex impedance analysis of Cu2+-doped KDP |
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Authors: | Houda Ettoumi Youping Gao Mohamed Toumi Tahar Mhiri |
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Institution: | 1. Laboratoire de L’Etat Solide (LES), Faculté des Sciences de Sfax, Université du Sfax, Route de Soukra Km 3.5, BP 802, 3018, Sfax, Tunisia 2. Laboratoire des Oxydes et Fluorures, Université du Maine, CNRS UMR 6010, Avenue O. Messiaen, 72085, Le Mans, France
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Abstract: | Raman spectroscopy and differential thermal analysis (DTA) and thermogravimetric analysis have been carried out on Cu-doped KH2PO4 (Cu-KDP). X-ray diffraction powder data reveal that the structure of the KDP crystal does not change with the additive Cu2+ ion. DTA analysis and Raman study of Cu-KDP as a function of temperature reveal that this compound undergoes two phase transitions at about Ttr =453 and 473 K. The electrical conductivity measurements on polycrystalline pellet of Cu-KDP (5) are performed from room temperature (RT) up to 495 K. Only one phase transition is observed at 470 K. The activation energy in the migration is 0.42 eV in the temperature range from RT to 470 K. For temperature above 470 K, the activation energy of the superprotonic phase is 1.87 eV. |
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