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Energy levels of vanadium ions in CdTe
Authors:P Peka  M U Lehr  H -J Schulz  R Schwarz  K W Benz
Institution:(1) Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany;(2) Kristallographisches Institut der Universität Freiburg, Hebelstrasse 25, D-79104 Freiburg, Germany
Abstract:In CdTe doped with vanadium the photoluminescence due to the 3 T 2(F) rarr 3 A 2(F) transition of V3+(d 2) is detected. Its decay time is determined as (630±20) mgrs, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm–1 and 9000 cm–1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V2+/V3+ donor level is 7300 cm–1 and 5700 cm–1 referred to the valence and the conduction band edges, respectively. The absence of V2+(d 3) centres is tentatively ascribed to the existence of deeply bound excitons.
Keywords:71  55  Gs  78  55  Et
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