Energy levels of vanadium ions in CdTe |
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Authors: | P Peka M U Lehr H -J Schulz R Schwarz K W Benz |
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Institution: | (1) Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany;(2) Kristallographisches Institut der Universität Freiburg, Hebelstrasse 25, D-79104 Freiburg, Germany |
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Abstract: | In CdTe doped with vanadium the photoluminescence due to the 3
T
2(F) 3
A
2(F) transition of V3+(d
2) is detected. Its decay time is determined as (630±20) s, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm–1 and 9000 cm–1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V2+/V3+ donor level is 7300 cm–1 and 5700 cm–1 referred to the valence and the conduction band edges, respectively. The absence of V2+(d
3) centres is tentatively ascribed to the existence of deeply bound excitons. |
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Keywords: | 71 55 Gs 78 55 Et |
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